TCAD ANALYSIS AND SIMULATION OF GATE ELECTRODE WORKFUNCTION ENGINEERED (GEWE) SILICON NANOWIRE MOSFET FOR HIGH PERFORMANCE ANALOG AND RF APPLICATIONS
By: GUPTA (NEHA).
Material type: BookPublisher: DELHI TECHNOLOGICAL UNIVERSITY 2017Description: 818.Subject(s): APPLIED PHYSICSDDC classification: 620.5 GUP Dissertation note: PH.D. 2017 DR. RISHU CHAUJARItem type | Current location | Call number | Status | Date due | Barcode |
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Elec. Thesis & Dissertation |
Delhi Technological University
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620.5 GUP (Browse shelf) | Not for loan | TD-2771 |
PH.D. 2017 DR. RISHU CHAUJAR
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